Optical and Surface Morphological Study of GaN Nanocolumn Grown on Gallium Coated Si by Molecular Beam Epitaxy

Kannappan Santhakumar; D.H. Kang; Jae Chul Song; Dong Wook Kim; J.S. Kim; M.D. Kim; Cheul Ro Lee

doi:10.4028/www.scientific.net/AMR.31.120

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Optical and Surface Morphological Study of GaN Nanocolumn Grown on Gallium Coated Si by Molecular Beam Epitaxy

Abstract:

Vertically aligned GaN nanocolumn arrays were grown by molecular beam epitaxy on Gallium coated silicon substrate. The dense packing of the NCs gives them the appearance of a continuous film in surface view, but cross-sectional analysis shows them to be isolated nanostructures. The GaN nanocolumns have uniform diameters of 85 nm, lengths up to 720 nm and possess a pyramid like tip. Photoluminescence measurements of NCs show excitonic emission with a dominant, narrow peak centered at 363 nm and FWHM of 68 meV. From the Raman spectrum, peaks at 566.9 and 730 cm-1 are assigned to the E2 and A1(LO) GaN phonons modes which clearly indicates that the grown nanocolumns are highly crystalline. The grown nanocolumns are highly oriented and perpendicular to the growth surface.

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Periodical:

Advanced Materials Research (Volume 31)

Pages:

120-122

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.31.120

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Online since:

November 2007

Authors:

Kannappan Santhakumar, D.H. Kang, Jae Chul Song, Dong Wook Kim, J.S. Kim, M.D. Kim, Cheul Ro Lee

Keywords:

Gallium Nitride (GaN), MBE, Nanocolumn, Si Substrate

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