The Gas Sensitvity Character of WO3 Nanosized Material

Shi Zhen Huang; Wei Lin; Wen Zhe Chen

doi:10.4028/www.scientific.net/AMR.31.126

Paper Titles

Mn, Cu Doping and Optical Properties of Highly Crystalline Ultralong ZnS Nanowires
p.114

In Situ Visualization of Layer Transitions during Convective Self-Assembly in a Sessile Drop
p.117

Optical and Surface Morphological Study of GaN Nanocolumn Grown on Gallium Coated Si by Molecular Beam Epitaxy
p.120

Nanometer-Scale In_0.5Ga_0.5As Ring-Like Structure Grown by Droplet Epitaxy
p.123

The Gas Sensitvity Character of WO₃ Nanosized Material
p.126

Effect of Oxygen Flow Rate and Temperature on the Structure of DC Sputtered Nanocrystalline Copper Oxide Films
p.129

In–Mole-Fraction and Thickness of Ultra-Thin InGaAs Insertion Layers Effects on the Structural and Optical Properties of InAs Quantum Dots
p.132

Investigation of Electrical Properties in Chalcogenide Thin Film According to Wave Length
p.135

Luminescence Properties of ZnS:Er Quantum Dots with NIR Excitation
p.138

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The Gas Sensitvity Character of WO₃ Nanosized Material

Abstract:

By thermal decomposition, WO3 nanosized material was prepared as sensitive material and doped SiO2 nanosized material has been prepared using Sol-Gel process. NO2 gas-sensing elements have been manufactured with prepared material. The element is sensitive to NO2 with fairly good selectivity. Micro-structure of the material was analyzed by SEM, and the sensing mechanism was discussed.