Investigation of Electrical Properties in Chalcogenide Thin Film According to Wave Length

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Programmable metallization cell (PMC) memory is based on the electrochemical control of nanoscale quantities of metal in thin films of solid electrolyte. We investigate the nature of thin films formed by the photo-dissolution of Ag into Ge-Se-Te glasses for use in programmable metallization cell devices. Glassy alloys of a-Ge25Se75-xTex(x = 0, 25) are prepared by well known melt-quenching technique. Thin films of a-Ge25Se75-xTex(x = 0, 25) glassy alloys are evaporated by vacuum evaporation technique at ~10-6 torr on glass substrate at room temperature. Optical properties in this study concerns photo-diffusion of Ag on Ag-doped Ge-Se-Te electrolytes. With these promising properties, the composition a-Ge25Se75-xTex(x = 0, 25) is recommended as a potential candidate for PMC-RAM.

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Edited by:

S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG

Pages:

135-137

Citation:

H. Choi et al., "Investigation of Electrical Properties in Chalcogenide Thin Film According to Wave Length", Advanced Materials Research, Vol. 31, pp. 135-137, 2008

Online since:

November 2007

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$38.00

[1] H.Y. Lee, H.B. Chung: J. Vac. Sci. Technol. Vol. B15 (1997), pp.818-822.

[2] H.B. Chung and C.Y. Park: J. of KIEE. Vol. 29 (1979), p.111.

[3] H.Y. Lee, S.H. Park, J.Y. Chun and H.B. Chung: J. Appl. Phys. Vol. 83 (1998), p.5381.

[4] J.I. Park, J.T. Lee, C.H. Yeo, Y.J. Lee, J.B. Kim and H.B. Chung: Jpn. J. Appl. Phys. Vol. 42 (2003), p.5090. Fig. 1. Schematics of photo-doping process and fabricated devices -5 -4 -3 -2 -1 0 1 2 3 4 5.

[10] [4] [10] [5] [10] [6] [10] [7] [10] [8] [10] [9] Resistance (Ω) Voltage (V) off state (-4. 58V) On state (4. 52V) Fig. 2. A resistance-voltage plot of Ag-doped Ge25Se50Te25 electrolyte that is exposed by He-Ne laser. -5 -4 -3 -2 -1 0 1 2 3 4 5.

[10] [3] [10] [4] [10] [5] [10] [6] [10] [7] Resistance (Ω) Voltage (v) off state (-3. 83V) on state (3. 89 V) Fig. 3. A resistance-voltage plot of Ag-doped Ge25Se75 electrolyte that is exposed by He-Ne laser. -5 -4 -3 -2 -1 0 1 2 3 4 5 104 105 106 107 108 109 Resistance (Ω) Voltage (V) off state (-3. 31V) on state (3. 26V) Fig. 4. A resistance-voltage plot of Ag-doped Ge25Se50Te25 electrolyte that is exposed by Ar laser. -5 -4 -3 -2 -1 0 1 2 3 4 5 103 104 105 106 107 Resistance (Ω) Voltage (V) off state (-2. 51V) on state (2. 53V) Fig. 5. A resistance-voltage plot of Cu-doped Ge25Se75 electrolyte that is exposed by Ar laser.

DOI: https://doi.org/10.3390/en10030384