Preparation and Characterization of Zn-Se Bilayer Structure

M. Singh; J.S. Arora; Kamlendra Awasthi; R. Nathawat; Y.K. Vijay

doi:10.4028/www.scientific.net/AMR.31.153

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Degradation of Photoluminescence in CdTe Nanoparticles Due to Cl₂ Contamination
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Preparation and Characterization of Zn-Se Bilayer Structure
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Development of Low Size Dispersion, High Volume Fraction and Strong Quantum Confined CdS_xSe_1-x Quantum Dots Embedded in Borosilicate Glass Matrix and Study of their Optical Properties
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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 31Preparation and Characterization of Zn-Se Bilayer...

Preparation and Characterization of Zn-Se Bilayer Structure

Abstract:

The Zn-Se bilayer structure prepared using thermal evaporation method at pressure 10-5 Torr. These films annealed in the vacuum for two hours on different constant temperatures. The optical band gap was found to be varying with annealing temperature due to removal of defects and increase in grain size. It was also observed by the X-ray diffraction pattern the grain size of the film increase with annealing temperature. The lattice constant of hexagonal structure of these films is found to be a =b=4.42Å and c=5.68Å. The dominant peaks to be at 23.2°,28° and 43.9° having values (100), (002) and (111) respectively. The Rutherford back scattering data of these films confirmed the mixing of elements with time.

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Periodical:

Advanced Materials Research (Volume 31)

Pages:

153-157

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.31.153

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Online since:

November 2007

Authors:

M. Singh, J.S. Arora, Kamlendra Awasthi, R. Nathawat, Y.K. Vijay

Keywords:

Bilayer, Nanostructure, RBS, Semiconductor, X-Ray Diffraction (XRD)

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