Luminescence Properties of ZnS:Er Quantum Dots with NIR Excitation

Xiao Song Zhang; Xiao Yi Dong; Gui Yun Kai; Dong Qing Dong; Yan Fang Zhang; Zhi Wang

doi:10.4028/www.scientific.net/AMR.31.138

Paper Titles

The Gas Sensitvity Character of WO₃ Nanosized Material
p.126

Effect of Oxygen Flow Rate and Temperature on the Structure of DC Sputtered Nanocrystalline Copper Oxide Films
p.129

In–Mole-Fraction and Thickness of Ultra-Thin InGaAs Insertion Layers Effects on the Structural and Optical Properties of InAs Quantum Dots
p.132

Investigation of Electrical Properties in Chalcogenide Thin Film According to Wave Length
p.135

Luminescence Properties of ZnS:Er Quantum Dots with NIR Excitation
p.138

The Synthesis and Crystallography of Some Novel ZnO Nano- and Micro-Crystals and Structures
p.141

Degradation of Photoluminescence in CdTe Nanoparticles Due to Cl₂ Contamination
p.150

Preparation and Characterization of Zn-Se Bilayer Structure
p.153

The Formation of InP Ring-Shape Nanostructures on In_0.49Ga_0.51P Grown by Droplet Epitaxy
p.158

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 31Luminescence Properties of ZnS:Er Quantum Dots...

Luminescence Properties of ZnS:Er Quantum Dots with NIR Excitation

Abstract:

ZnS:Er quantum dots were prepared in the aqueous medium from readily available precursors. The construction, morphology and luminescence properties of the ZnS:Er quantum dots were evaluated by XRD,TEM and photoluminescence spectra. Furthermore, the 1590 nm emission of the ZnS:Er quantum dots excited by a 785.0 nm NIR laser were discussed.