In–Mole-Fraction and Thickness of Ultra-Thin InGaAs Insertion Layers Effects on the Structural and Optical Properties of InAs Quantum Dots

P. Boonpeng; S. Panyakeow; S. Ratanathammaphan

doi:10.4028/www.scientific.net/AMR.31.132

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 31In–Mole-Fraction and Thickness of Ultra-Thin...

In–Mole-Fraction and Thickness of Ultra-Thin InGaAs Insertion Layers Effects on the Structural and Optical Properties of InAs Quantum Dots

Abstract:

InAs quantum dots (QDs) have been grown by solid-source molecular beam epitaxy on different InxGa1-xAs (0 ≤ x ≤ 0.3) to investigate the effect of In-mole-fraction and thickness of InGaAs insertion layer (IL) on the structural and optical properties of the QDs. The density of QDs directly grown on GaAs is 1×1010 cm-2, and increase to 1.4-1.8×1010 cm-2 on InGaAs layers which depend on the In-mole-fraction and thickness of InGaAs layers. The effects of In-mole-fraction and thickness of InGaAs insertion layer on optical properties of the QDs are studied by photoluminescence (PL). The FWHM of PL spectrum corresponds to the size distribution of the QDs.

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Periodical:

Advanced Materials Research (Volume 31)

Pages:

132-134

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.31.132

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Online since:

November 2007

Authors:

P. Boonpeng, S. Panyakeow, S. Ratanathammaphan

Keywords:

GaAs, InAs Quantum dot, InGaAs Insertion Layers, Molecular-Beam Epitaxy System

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