Nanometer-Scale In0.5Ga0.5As Ring-Like Structure Grown by Droplet Epitaxy

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We have demonstrated the fabrication of InGaAs ring-like nanostructures by dropletepitaxy technique using molecular-beam epitaxy. Dependence on the substrate temperature and the amount of indium and gallium of the nanostructural properties was investigated. It was found that increasing substrate temperature resulted in larger InGaAs ring size but with lower density and that increasing In0.5Ga0.5 amount resulted in larger InGaAs ring size but with oscillating density. Photoluminescence results confirmed the high quality of the nanocrystal.

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Edited by:

S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG

Pages:

123-125

Citation:

N. Pankaow et al., "Nanometer-Scale In0.5Ga0.5As Ring-Like Structure Grown by Droplet Epitaxy", Advanced Materials Research, Vol. 31, pp. 123-125, 2008

Online since:

November 2007

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$38.00

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