Nanometer-Scale In0.5Ga0.5As Ring-Like Structure Grown by Droplet Epitaxy

N. Pankaow; S. Panyakeow; S. Ratanathammaphan

doi:10.4028/www.scientific.net/AMR.31.123

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 31Nanometer-Scale In0.5Ga0.5As Ring-Like Structure...

Nanometer-Scale In_0.5Ga_0.5As Ring-Like Structure Grown by Droplet Epitaxy

Abstract:

We have demonstrated the fabrication of InGaAs ring-like nanostructures by dropletepitaxy technique using molecular-beam epitaxy. Dependence on the substrate temperature and the amount of indium and gallium of the nanostructural properties was investigated. It was found that increasing substrate temperature resulted in larger InGaAs ring size but with lower density and that increasing In0.5Ga0.5 amount resulted in larger InGaAs ring size but with oscillating density. Photoluminescence results confirmed the high quality of the nanocrystal.

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Periodical:

Advanced Materials Research (Volume 31)

Pages:

123-125

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.31.123

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Online since:

November 2007

Authors:

N. Pankaow, S. Panyakeow, S. Ratanathammaphan

Keywords:

Droplet, GaAs, InGaAs, Molecular Beam Epitaxy, Nanostructure

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