The Formation of InP Ring-Shape Nanostructures on In0.49Ga0.51P Grown by Droplet Epitaxy

W. Jewasuwan; S. Panyakeow; S. Ratanathammaphan

doi:10.4028/www.scientific.net/AMR.31.158

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 31The Formation of InP Ring-Shape Nanostructures on...

The Formation of InP Ring-Shape Nanostructures on In_0.49Ga_0.51P Grown by Droplet Epitaxy

Abstract:

We report on the fabrication of self-assembled InP ring-shape nanostructures on In0.49Ga0.51P by droplet molecular-beam epitaxy. The dependency of InP ring-shape nanostructural properties on substrate temperature and indium deposition rate is investigated by ex situ atomic force microscope (AFM). The nano-craters are formed when indium deposition at 120°C while the ring shape quantum-dot molecules are formed when indium deposition at 150°C or higher. The size, density and pattern of InP ring-shape nanostructures strongly depend on substrate temperature and indium deposition rate during indium deposition.

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Periodical:

Advanced Materials Research (Volume 31)

Pages:

158-160

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.31.158

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Online since:

November 2007

Authors:

W. Jewasuwan, S. Panyakeow, S. Ratanathammaphan

Keywords:

Droplet Epitaxy, GaAs, InP, Molecular Beam Epitaxy, Nanostructure

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