The Formation of InP Ring-Shape Nanostructures on In0.49Ga0.51P Grown by Droplet Epitaxy
We report on the fabrication of self-assembled InP ring-shape nanostructures on In0.49Ga0.51P by droplet molecular-beam epitaxy. The dependency of InP ring-shape nanostructural properties on substrate temperature and indium deposition rate is investigated by ex situ atomic force microscope (AFM). The nano-craters are formed when indium deposition at 120°C while the ring shape quantum-dot molecules are formed when indium deposition at 150°C or higher. The size, density and pattern of InP ring-shape nanostructures strongly depend on substrate temperature and indium deposition rate during indium deposition.
S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG
W. Jewasuwan et al., "The Formation of InP Ring-Shape Nanostructures on In0.49Ga0.51P Grown by Droplet Epitaxy", Advanced Materials Research, Vol. 31, pp. 158-160, 2008