The Formation of InP Ring-Shape Nanostructures on In0.49Ga0.51P Grown by Droplet Epitaxy

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We report on the fabrication of self-assembled InP ring-shape nanostructures on In0.49Ga0.51P by droplet molecular-beam epitaxy. The dependency of InP ring-shape nanostructural properties on substrate temperature and indium deposition rate is investigated by ex situ atomic force microscope (AFM). The nano-craters are formed when indium deposition at 120°C while the ring shape quantum-dot molecules are formed when indium deposition at 150°C or higher. The size, density and pattern of InP ring-shape nanostructures strongly depend on substrate temperature and indium deposition rate during indium deposition.

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Periodical:

Edited by:

S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG

Pages:

158-160

Citation:

W. Jewasuwan et al., "The Formation of InP Ring-Shape Nanostructures on In0.49Ga0.51P Grown by Droplet Epitaxy", Advanced Materials Research, Vol. 31, pp. 158-160, 2008

Online since:

November 2007

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$38.00

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