Surface and Structure of Porous Silicon Layers

Jing Mei Lu; Xuan Cheng

doi:10.4028/www.scientific.net/AMR.31.170

Paper Titles

The Formation of InP Ring-Shape Nanostructures on In_0.49Ga_0.51P Grown by Droplet Epitaxy
p.158

Development of Low Size Dispersion, High Volume Fraction and Strong Quantum Confined CdS_xSe_1-x Quantum Dots Embedded in Borosilicate Glass Matrix and Study of their Optical Properties
p.161

Tuning of Energy Band Gaps in Ternary Semiconductors
p.164

Luminescence Properties of ZnS:Mn Quantum Dots
p.167

Surface and Structure of Porous Silicon Layers
p.170

Broadband Emission in InAs/InGaAlAs Quantum-Dash-in-Well Laser
p.173

Improved Carbon Counter Electrodes for Dye Sensitized Solar Cells
p.176

Development of Fabrication Process and Electrostatic Microactuator for a Mechanically Tunable 2-D Photonic Crystal
p.179

Nano-Scale Bandgap Engineering Using Nitrogen Implantation: Quantum-Well, Quantum-Dash and Quantum-Dot Nanostructures
p.182

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 31Surface and Structure of Porous Silicon Layers

Surface and Structure of Porous Silicon Layers

Abstract:

The porous silicon (PS) layers were fabricated on n(100) and n(111) silicon by applying the constant and repeated currents in different HF solutions. The electrochemical impedance spectroscopy (EIS) was used to in-situ characterize the Si/electrolyte interface before and after the PS formations. The surface and structure of PS layers were examined in terms of electrochemical/surface parameters.