Surface and Structure of Porous Silicon Layers
The porous silicon (PS) layers were fabricated on n(100) and n(111) silicon by applying the constant and repeated currents in different HF solutions. The electrochemical impedance spectroscopy (EIS) was used to in-situ characterize the Si/electrolyte interface before and after the PS formations. The surface and structure of PS layers were examined in terms of electrochemical/surface parameters.
S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG
J. M. Lu and X. Cheng, "Surface and Structure of Porous Silicon Layers", Advanced Materials Research, Vol. 31, pp. 170-172, 2008