Tuning of Energy Band Gaps in Ternary Semiconductors

Abstract:

Article Preview

The first principle investigations on electronic structure of ABC2 (A = Cd; B = Si, Ge, Sn; C= P, As) pnictides using the Tight Binding Linear Muffin Tin Orbital (TB-LMTO) method within the Atomic Sphere Approximation (ASA) is reported. Variation of Eg with pressure reveals the direct and pseudodirect natures of these compounds. CdSiP2 shows a pseudo direct and CdGeP2, CdSnP2, CdSiAs2, CdGeAs2 and CdSnAs2 show direct band gap natures. Semiconductor to metal transition at high pressures is observed. Metallisation volumes (V/Vo) m and pressures (Pm), bulk modulus (Bo) and its pressure derivative (Bo 1) are reported. Correlation connecting Bo and the unit cell volume (Vo) is established.

Info:

Periodical:

Edited by:

S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG

Pages:

164-166

Citation:

R. John "Tuning of Energy Band Gaps in Ternary Semiconductors", Advanced Materials Research, Vol. 31, pp. 164-166, 2008

Online since:

November 2007

Authors:

Export:

Price:

$38.00

[1] J.L. Shay and J.H. Wernick : Ternary Chalcopyrite semiconductors: Growth, Electronic Properties and applications, (Pergamon, Oxford, 1974).

[2] Rita John, Solid State Phenomena, 124-126, (2007), p.57.

[3] R. Asokamani and R. Rita, Phys. Stat. Sol. (b), 226, (2001), p.375.

[4] O.K. Andersen and O. Jepsen, Phys. Rev. Lett, 53, (1984), p.2571.

[5] U. Von Barth and L. Hedin, J. Phys. C, 5, (1972), p.1629.

[6] A. Jayaraman, V. Narayanamurti and R.G. Maines, Phys. Rev., B, 14, (1976), p.3516.

[7] F. Chiker, B. Abbar, A. Tadjer, S. Bresson, B. Khelifa, and C. Mathieu, Physica B 349, (2004), p.181.

[8] P. Vinet, J. Phys. C, 1, (1989), p. (1941).

[9] H. Katzman, T. Donohue, W.F. Libby, H.L. Luo and J.G. Huber, J. Phys. Chem., 30, (1969), p.1609.

[10] R. Asokamani : Solid State Physics (Anamaya, India, 2006), 35.

[11] H. Neumann, Phys. Stat. Sol. (A), 96, (1986), p.201.

Fetching data from Crossref.
This may take some time to load.