Broadband Emission in InAs/InGaAlAs Quantum-Dash-in-Well Laser

Abstract:

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We report on the development of wide gain InAs/InGaAlAs/InP quantum-dash structure for broadband diode laser and amplifier. Characterizations of this material system have been performed using spectroscopy and microscopy techniques. Gain-guided broad area laser fabricated using this material system exhibits lasing wavelength coverage of up to 76 nm at ~1.64 (m center wavelength from simultaneous multiple confined states lasing at room temperature.

Info:

Periodical:

Edited by:

S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG

Pages:

173-175

DOI:

10.4028/www.scientific.net/AMR.31.173

Citation:

B. S. Ooi et al., "Broadband Emission in InAs/InGaAlAs Quantum-Dash-in-Well Laser", Advanced Materials Research, Vol. 31, pp. 173-175, 2008

Online since:

November 2007

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$35.00

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