Broadband Emission in InAs/InGaAlAs Quantum-Dash-in-Well Laser
We report on the development of wide gain InAs/InGaAlAs/InP quantum-dash structure for broadband diode laser and amplifier. Characterizations of this material system have been performed using spectroscopy and microscopy techniques. Gain-guided broad area laser fabricated using this material system exhibits lasing wavelength coverage of up to 76 nm at ~1.64 (m center wavelength from simultaneous multiple confined states lasing at room temperature.
S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG
B. S. Ooi et al., "Broadband Emission in InAs/InGaAlAs Quantum-Dash-in-Well Laser", Advanced Materials Research, Vol. 31, pp. 173-175, 2008