Broadband Emission in InAs/InGaAlAs Quantum-Dash-in-Well Laser

Boon S. Ooi; Hery S. Djie; Amr.S. Helmy; James C.M. Hwang

doi:10.4028/www.scientific.net/AMR.31.173

Paper Titles

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Tuning of Energy Band Gaps in Ternary Semiconductors
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Luminescence Properties of ZnS:Mn Quantum Dots
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Surface and Structure of Porous Silicon Layers
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Broadband Emission in InAs/InGaAlAs Quantum-Dash-in-Well Laser
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Improved Carbon Counter Electrodes for Dye Sensitized Solar Cells
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Development of Fabrication Process and Electrostatic Microactuator for a Mechanically Tunable 2-D Photonic Crystal
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Nano-Scale Bandgap Engineering Using Nitrogen Implantation: Quantum-Well, Quantum-Dash and Quantum-Dot Nanostructures
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Higher Crystalline Volume Yields from Excimer Laser Crystallization of Amorphous Silicon with an Asymmetrical Peak Pulse Profile
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Broadband Emission in InAs/InGaAlAs Quantum-Dash-in-Well Laser

Abstract:

We report on the development of wide gain InAs/InGaAlAs/InP quantum-dash structure for broadband diode laser and amplifier. Characterizations of this material system have been performed using spectroscopy and microscopy techniques. Gain-guided broad area laser fabricated using this material system exhibits lasing wavelength coverage of up to 76 nm at ~1.64 (m center wavelength from simultaneous multiple confined states lasing at room temperature.