Nano-Scale Bandgap Engineering Using Nitrogen Implantation: Quantum-Well, Quantum-Dash and Quantum-Dot Nanostructures

Y.H. Ding; V. Hongpinyo; Hery S. Djie; Boon S. Ooi

doi:10.4028/www.scientific.net/AMR.31.182

Paper Titles

Surface and Structure of Porous Silicon Layers
p.170

Broadband Emission in InAs/InGaAlAs Quantum-Dash-in-Well Laser
p.173

Improved Carbon Counter Electrodes for Dye Sensitized Solar Cells
p.176

Development of Fabrication Process and Electrostatic Microactuator for a Mechanically Tunable 2-D Photonic Crystal
p.179

Nano-Scale Bandgap Engineering Using Nitrogen Implantation: Quantum-Well, Quantum-Dash and Quantum-Dot Nanostructures
p.182

Higher Crystalline Volume Yields from Excimer Laser Crystallization of Amorphous Silicon with an Asymmetrical Peak Pulse Profile
p.185

Distributed Feedback Laser Using Buried Dielectric Grating
p.189

Electrical Properties and UV Response of Single ZnO Nanorod
p.192

Population Dynamics of Excitons in Silicon Nanocrystals Structures under Strong Optical Excitation
p.196

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 31Nano-Scale Bandgap Engineering Using Nitrogen...

Nano-Scale Bandgap Engineering Using Nitrogen Implantation: Quantum-Well, Quantum-Dash and Quantum-Dot Nanostructures

Abstract:

Nano-scale spatial wavelength engineering of quantum nanostructures using nitrogen ion-implantation induced intermixing has been developed for tuning the bandgap of quantum-well, quantum-dash-in-well, and quantum-dot nanostructures. High performance bandgap-tuned quantum-well and quantum-dash lasers fabricated using this technique has been demonstrated.