Distributed Feedback Laser Using Buried Dielectric Grating

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In this paper, we report a DFB laser diode with a buried SiO2 grating. Epitaxy lateral overgrowth by metalorganic chemical vapour deposition (MOCVD) is conducted to grow the p-type InP cladding layers in the nano-patterned dielectric grating template. The large refractive index difference between SiO2 and InP results an index coupling coefficient κ of about 250 cm-1. The fabricated DFB laser showed a side mode suppression ratio larger than 45 dB measured. The technology developed can also be used for other applications that require high efficiency grating structure.

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Edited by:

S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG

Pages:

189-191

Citation:

J. H. Teng et al., "Distributed Feedback Laser Using Buried Dielectric Grating", Advanced Materials Research, Vol. 31, pp. 189-191, 2008

Online since:

November 2007

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[1] 5344 }n2 Coupling Coefficient (µµµµm-1 ) Refractive Index Differences ( n12 -n2 2 ) GD=0. 05µm, GT=0. 6µm GD=0. 03µm, GT=0. 3µm GD : Grating Depth GT : Guiding Thickness Fig. 3. Coupling coefficient for choice of different grating materials Fig. 4. TEM picture of the ELO grown InP in the SiO2 template.