Population Dynamics of Excitons in Silicon Nanocrystals Structures under Strong Optical Excitation

Olga A. Shalygina; Denis M. Zhigunov; Dmitrii A. Palenov; Victor Timoshenko; Pavel K. Kashkarov; M. Zacharias; Paul M. Koenraad

doi:10.4028/www.scientific.net/AMR.31.196

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 31Population Dynamics of Excitons in Silicon...

Population Dynamics of Excitons in Silicon Nanocrystals Structures under Strong Optical Excitation

Abstract:

We report on the experimental and theoretical studies of population/depopulation dynamics of excitons in the structures with Si nanocrystals in SiO2 matrix (nc-Si/SiO2) under strong optical excitation. The experimental results are explained using a phenomenological model based on rate equations for coupled system of energy donors (excitons) and energy acceptors (erbium ions). Exciton luminescence is found to exhibit superlinear dependence for Er-doped samples. At the same time the Er-related luminescence at 1.5 μm shows a saturation of the intensity and shortening of the lifetime, which are attributed to the population inversion of the Er ions states. The obtained results demonstrate that nc-Si/SiO2:Er systems can be used for applications in Si-based optical amplifiers and lasers, compatible with planar Si-technology.

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Periodical:

Advanced Materials Research (Volume 31)

Pages:

196-198

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.31.196

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Online since:

November 2007

Authors:

Olga A. Shalygina, Denis M. Zhigunov, Dmitrii A. Palenov, Victor Timoshenko, Pavel K. Kashkarov, M. Zacharias, Paul M. Koenraad

Keywords:

Energy Transfer, Erbium Ions, Photoluminescence (PL), Silicon Nanocrystals

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