DFB Waveguide All-Optical Switching Devices Employing Pump-Induced Refractive Index Change in GaInAsP

Tetsuya Mizumoto; Yoichi Akano; Kazuhiko Tamura; Masaki Yoshimura

doi:10.4028/www.scientific.net/AMR.31.206

Paper Titles

Electrical Properties and UV Response of Single ZnO Nanorod
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Population Dynamics of Excitons in Silicon Nanocrystals Structures under Strong Optical Excitation
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Investigation of Morphology and Photoluminescence of Hydrothermally-Grown ZnO Nanorods Grown on Substrates Pre-Coated with ZnO Nanoparticles
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Dicing Laminated Wafer for QFN 3D Stacked Die Packaging
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DFB Waveguide All-Optical Switching Devices Employing Pump-Induced Refractive Index Change in GaInAsP
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Study of Thermal-Anneal-Induced Rearrangement of N-Bonding Configurations in GaInNAs/GaAs Quantum Well
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Nano Size Lanthanum Doped Semiconductors: Synthesis, Characterization and their Photocatalytic Activity
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Structural Investigation of Cubic-Phase InN on GaAs (001) Grown by MBE under In- and N-Rich Growth Conditions
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MOVPE Growth Window for High-Nitrogen GaAsN Alloy Films for Long Wavelength Emission
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DFB Waveguide All-Optical Switching Devices Employing Pump-Induced Refractive Index Change in GaInAsP

Abstract:

A pump-induced refractive index change was measured in a passive GaInAsP waveguide together with its temporal response. Also, the temporal response of distributed feedback (DFB) waveguide transmittance modulated by the pump-induced index change was experimentally investigated for an application to all-optical switching devices.