Study of Thermal-Anneal-Induced Rearrangement of N-Bonding Configurations in GaInNAs/GaAs Quantum Well

V. Dixit; Hong Fei Liu; N. Xiang

doi:10.4028/www.scientific.net/AMR.31.209

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 31 Study of Thermal-Anneal-Induced Rearrangement of...

Study of Thermal-Anneal-Induced Rearrangement of N-Bonding Configurations in GaInNAs/GaAs Quantum Well

Abstract:

Blueshifts of photoluminescence (PL) peak wavelength from GaInNAs/GaAs quantum well (QW) at various annealing temperatures have been studied. Our results indicate that as-grown GaInNAs/GaAs QW sample has N-Ga3In1 phase, which changes to a mixture of N-Ga3In1 and NGa2In2 after annealing. The activation energy characterized for short range order is 2.38 eV, which is smaller than that for the diffusion process (3.196 eV). This indicates that the short range order is the dominant mechanism for PL blueshift at relatively low annealing temperature and for short time annealing.

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Advanced Materials Research (Volume 31)

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209-211

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.31.209

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Online since:

November 2007

Authors:

V. Dixit, Hong Fei Liu, N. Xiang

Keywords:

Blueshift, GaInNAs, Photoluminescence (PL), Quantum Well, Short Range Order

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