Research on Annealing Temperature of SiO2 on Si Substrate
Silicon dioxide films; radio-frequency magnetron sputtering; annealing temperature Abstract. Silicon dioxide (SiO2) films are fabricated on single crystal silicon substrate by radio-frequency magnetron sputtering (RFMS) technique and annealed in electric furnaces at 800°C and 1180°C to form uniform, transparent and compact silica. The surface morphology and roughness of the films are characterized by an atomic force microscopy (AFM). X-ray diffraction (XRD) is employed to analyze the crystalline of the thin films. The chemical composition after annealing is analyzed using X-ray photoelectron spectroscopy (XPS).
H. Lv et al., "Research on Annealing Temperature of SiO2 on Si Substrate", Advanced Materials Research, Vols. 311-313, pp. 1258-1261, 2011