Research on Annealing Temperature of SiO2 on Si Substrate

Abstract:

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Silicon dioxide films; radio-frequency magnetron sputtering; annealing temperature Abstract. Silicon dioxide (SiO2) films are fabricated on single crystal silicon substrate by radio-frequency magnetron sputtering (RFMS) technique and annealed in electric furnaces at 800°C and 1180°C to form uniform, transparent and compact silica. The surface morphology and roughness of the films are characterized by an atomic force microscopy (AFM). X-ray diffraction (XRD) is employed to analyze the crystalline of the thin films. The chemical composition after annealing is analyzed using X-ray photoelectron spectroscopy (XPS).

Info:

Periodical:

Advanced Materials Research (Volumes 311-313)

Edited by:

Zhongning Guo

Pages:

1258-1261

DOI:

10.4028/www.scientific.net/AMR.311-313.1258

Citation:

H. Lv et al., "Research on Annealing Temperature of SiO2 on Si Substrate", Advanced Materials Research, Vols. 311-313, pp. 1258-1261, 2011

Online since:

August 2011

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Price:

$35.00

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