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Research on Annealing Temperature of SiO2 on Si Substrate

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Abstract:

Silicon dioxide films; radio-frequency magnetron sputtering; annealing temperature Abstract. Silicon dioxide (SiO2) films are fabricated on single crystal silicon substrate by radio-frequency magnetron sputtering (RFMS) technique and annealed in electric furnaces at 800°C and 1180°C to form uniform, transparent and compact silica. The surface morphology and roughness of the films are characterized by an atomic force microscopy (AFM). X-ray diffraction (XRD) is employed to analyze the crystalline of the thin films. The chemical composition after annealing is analyzed using X-ray photoelectron spectroscopy (XPS).

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Advanced Materials and Processes: ADME 2011 View Preview

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Periodical:

Advanced Materials Research (Volumes 311-313)

Pages:

1258-1261

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.311-313.1258

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Online since:

August 2011

Authors:

Hao Lv, Yao Ming Ding, Ai Mei Liu, Ju Fang Tong, Xu Nong Yi, Qian Guang Li, Chen Chen, Bang Ren Shi

Keywords:

Annealing Temperature, Radio-Frequency Magnetron Sputtering (RF-MS), Silicon Dioxide Films

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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