Effect of Thickness on the Structural, Electrical and Optical Properties of ZnO Films Deposited by MBE

Abstract:

A set of ZnO films of different thickness have been deposited on sapphire substrates using molecular beam epitaxy (MBE) by varying the growth time and the effect of film thickness on the structural, electrical and optical properties have been investigated. The X-ray diffraction (XRD) results indicate that the full width at half maximum (FWHM) of the (002) diffraction peak is decreased as the film thickness increasing, and the stress along c-axis is stable. Scanning electron microscope (SEM) measurement shows that the grains become more uniform as the film grows thicker and the film surface present distinct hexagon shape as the film is grown up to a thickness of 500nm. The optical absorbance, Hall mobility and photoluminescence (PL) intensity are increased in accordance with the thickness of the film.

• Periodical: Advanced Materials Research (Volumes 311-313)
• Pages: 1271-1276
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.311-313.1271
• Online since: August 2011
• Authors: Xiao Dong Yang, Shi Chen Su, Yi Xu, Ting Mei
• Keywords: Molecular Beam Epitaxy, Sapphire, Substrate, X-Ray Diffraction (XRD)

References

[1] Neeru Kumar, Ravinder Kaur, R. M. Mehra, Journal of Luminescence. 126 (2007) 784-788.

[2] Y. F. Chen, D. M. Bagnall, H. Koh,, K. Park, K. Hiraga, Z. Zhu, T. Yao, J. Appl. Phys. 84 (1998) 3912.

[3] R. Ghosh, G. K. Paul, D. Basak, Bull. Mater. Sci. 40 (2005) 1905-1914.

[4] W. Y. Liang, A. D. Yoffe, Phys. Rev. Lett. 20 (1968) 59.

[5] D. C. Look, Mater. Sci. Eng. B 80 (2001) 383.

[6] Bin-Zhong Dong, Guo-Jia Fang, Jian-Feng Wang, Wen-Jie Guan, Xing-Zhong Zhao, J. Appl. Phys. 101 (2007) 033713.

[7] H.Agura, A.Suzuki, T. Matsushita, T. Aoki, M. Okuda, Thin Solid Film 445 (2003) 263.

[8] T. Minami, Semicond. Sci. Technol. 20 (2005) 35.

[9] S. Choopun, R. D. Vispute, W. Noch, A. Balsamo, R. P. Sharma, T. Venkatesan, A. Iliadis, D. C. Look, Appl. Phys. Lett. 75 (1999) 3947.

DOI: 10.1063/1.125503

[10] S. Mridha, D. Basak, Bull. Mater. Sci. 42 (2007) 875-882.

[11] Petronela Prepelita, R. Medianu, Beatrice Sbarcea, F. Garoi, Mihaela Filipescu, Appl. Surf. Sci. 256 (2010) 1807-1811.

DOI: 10.1016/j.apsusc.2009.10.011

[12] Dong Ick Son, Jubg Wook Lee, Dea Uk Lee, Tae Whan Kim, Surf. Rev. Lett. 14(4) (2007) 801-805.

[13] M. Kumar, R. M. Mehra, A. Wakahara, M. Ishida, A. Yoshida, J. Appl. Phys. 93 (2003) 3837.

[14] V.Craciun, J. Elders, J. G. E. Gardeniers. Lan W. Boyd, Appl. Phys. Lett. 65 (1994) 2963.

[15] S. C. Su, Y. M. Lu, Z. Z. Zhang, C. X. Shan, B. Yao, B. H. Li, D. Z. Shen, J. Y. Zhang, D. X. Zhao, X. W. Fan, Appl. Surf. Sci. 254 (2008) 7303-7305.

[16] E.M. Kaidashev, M.Lorenz, H.Von Wenckstern, A. Rahm, H.-C.Semmelhack, K.-H.Han, G.Benndorf, C. Bundesmann, H.Hochmuth, M.Grundmann, Appl. Phys. Lett. 82 (2003) 3901.

DOI: 10.1063/1.1578694

[17] H. S. Kang, J. S. Kang, J. W. Kim, S. Y. Lee, J. Appl. Phys. 95 (2004) 1246.

[18] Y. J. Lin, C.-L. Tsai, Y. –M. Lu, C.-J. Liu, J. Appl. Phys. 99 (2006) 093501.