For Libraries For Publication Open Access Downloads About Us Contact Us
Paper Titles
Study on Microstructure and Property of Cast Aluminum from the Reaction of New SHS Aluminum Welding Powder
p.216
Mechanical Anisotropy of Extruded Mg-10Gd-2Y-0.5Zr Alloy
p.222
Kinematic Analysis of a Novel Three Degree of Freedom Parallel Mechanism
p.228
Preparation and Properties of MgXZn1-XO:Al Ceramics
p.232
Effects of Sintering Temperature on Structure and Electronic Properties of Mg0.2Zn0.8O:Al Ceramics
p.236
Grain Boundary Characteristics of 0.01 mol%V2O5-Doped ZnO-Bi2O3-Based Varistor Ceramics
p.240
Computer-Aided Design (CAD) and Environmental Art Design
p.244
Study on Serialization Design for Deck Crane Boom
p.249
The Effect of Confining Pressures on Rock Fracturing under Dynamic Loads
p.255

Effects of Sintering Temperature on Structure and Electronic Properties of Mg0.2Zn0.8O:Al Ceramics

Article Preview

Abstract:

Mg0.2Zn0.8O:Al ceramics with high density using nano scale ZnO, MgO and Al2O3 powders as raw materials were obtained by pressureless sintering. The influence of presintering powder and sintering temperature on microstructure of Mg0.2Zn0.8O:Al ceramics were studied. The experiment indicated that presintering powder might decrease produce of the second phase nucleation. The grain size became gradually larger and density of ceramic became obviously higher from 1100°C to 1300°C, but the rising-trend became slower after 1300°C. The Mg0.2Zn0.8O:Al ceramics with high density and homogeneous structure can be made at 1300°C for

You might also be interested in these eBooks
Key Engineering Materials and Computer Science View Preview

Info:

Periodical:

Advanced Materials Research (Volume 320)

Pages:

236-239

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.320.236

Citation:

Cite this paper

Online since:

August 2011

Authors:

Hong Yan, Hua Wang, Shang Ju Zhou

Keywords:

Electronic Properties, Mg0.2Zn0.8O:Al, Microstructure, Zinc Compounds

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2011 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] K. Kazuto, H. Kenji and N. Ippei: J. Crystal Growth Vol. 278(2005), p.288.

Google Scholar

[2] R. Thangavel, M. Rajagopalan and J. Kumar: Solid State Commun. Vol. 137(2006), p.507.

Google Scholar

[3] W. Yang, R. D. Vispute and S. Choopun: Appl. Phys. Lett. Vol. 78(2001), p.2787.

Google Scholar

[4] V. Ratnakar, V. Thirumalai, Y. Wei and C. Supab, U.S. Patent 7, 132, 668. (2006).

Google Scholar

[5] H. Ohta, K. Nomura and H. Hiramatsu: Solid State Electr. Vol. 47(2003), p.2261.

Google Scholar

[6] P. L. Chen, X. Y. Ma and D. Li: Appl. Phys. Lett. Vol. 90(2007), p.1115. 1.

Google Scholar

[7] H. Ota, M. Orita and H. Hosono, U.S. Patent 0, 107, 098A1. (2003).

Google Scholar

[8] D. C. Look: Mater. Sci. Eng. B Vol. 80(2001) p.383.

Google Scholar

© 2025 Trans Tech Publications Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies. For open access content, terms of the Creative Commons licensing CC-BY are applied.
Scientific.Net is a registered trademark of Trans Tech Publications Ltd.