Molecular Dynamics Simulation of Ni/Cu Epitaxial Thin Film Growth

Abstract:

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In this paper, the growth process of Ni deposited on the Cu() surface at 300K and 700K was simulated by molecular dynamics. The impact of the substrate temperature on the growth pattern and structure of thin film was investigated. The simulation results show that, at the higher substrate temperature, the surface of thin film is smoother and the growth pattern of thin film is two-dimensional layer, however, at the lower temperature, the growth mode of thin film is three-dimensional island.

Info:

Periodical:

Edited by:

Jun Hu and Qi Luo

Pages:

373-376

DOI:

10.4028/www.scientific.net/AMR.320.373

Citation:

Z. Q. Liu et al., "Molecular Dynamics Simulation of Ni/Cu Epitaxial Thin Film Growth", Advanced Materials Research, Vol. 320, pp. 373-376, 2011

Online since:

August 2011

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$35.00

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