Weak Localization and Universal Conductance Fluctuations on Epitaxial Graphene Grown on the C-Face of 8°off-Axis 4H-SiC Substrates

Bilal Jabakhanji; Nicolas Camara; Christophe Consejo; Benoît Jouault

doi:10.4028/www.scientific.net/AMR.324.269

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Structural, Optical and Electrical Properties of ZnO Sprayed Thin Films Doped with Fluorine
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Modeling of the Boron Emitter Formation Process from BCl₃ Diffusion for N-Type Silicon Solar Cells Processing
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Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers: A Comparison between Standard and Plasma Immersion Processes
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Weak Localization and Universal Conductance Fluctuations on Epitaxial Graphene Grown on the C-Face of 8°off-Axis 4H-SiC Substrates
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Analytical Method to Calibrate Cylindrical LaBr₃(Ce) Scintillation Detector
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High Frequency Ultrasound, a Tool for Elastic Properties Measurement of Thin Films Fabricated on Silicon
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The Low-Lying Excited Electronic States of an Alkali-Earth Compounds
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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 324Weak Localization and Universal Conductance...

Weak Localization and Universal Conductance Fluctuations on Epitaxial Graphene Grown on the C-Face of 8°off-Axis 4H-SiC Substrates

Abstract:

We report magnetotransport measurements in single epitaxial graphene layers grown on the C-face of an 8° off-axis 4H-SiC substrate using high temperature annealing conditions with a graphite cap covering the sample. The graphene sheets were found p-type doped, with mobilities varying between 1000 and 11000 cm²/V.s from device to device at 1.6 K. We examine the signature of weak localization and universal conductance fluctuations at weak magnetic field and we show that the phase coherence lengths extracted from the two phenomena are in satisfactory agreement.

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Periodical:

Advanced Materials Research (Volume 324)

Pages:

269-272

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.324.269

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Online since:

August 2011

Authors:

Bilal Jabakhanji, Nicolas Camara, Christophe Consejo, Benoît Jouault

Keywords:

Electron-Electron Interaction, Magnetoresistivity MR, Universal Conductance Fluctuation, Weak Antilocalization, Weak Localization

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