Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers: A Comparison between Standard and Plasma Immersion Processes

Laurent Ottaviani; Stéphane Biondo; Michel Kazan; Olivier Palais; Julian Duchaine; Frédéric Milesi; Rachid Daineche; Blandine Courtois; Frank Torregrosa

doi:10.4028/www.scientific.net/AMR.324.265

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 324Implantation of Nitrogen Atoms in 4H-SiC Epitaxial...

Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers: A Comparison between Standard and Plasma Immersion Processes

Abstract:

This paper focuses on the formation of thin n+p junctions in p-type Silicon Carbide (SiC) epitaxial layers using two kinds of Nitrogen implantations. The standard beam ion implantations and PULSIONTM processes were performed at two distinct energies (700 eV and 7 keV), and the subsequent annealing was held at 1600°C in a resistive furnace specifically adapted to SiC material. No measurable electrical activity was obtained for both implantations performed at 700 eV, due to some outdiffusion of N dopants during the annealing despite a low surface roughness (rms ~ 1.4 nm) and no residual damage detected by RBS/C. A higher sheet resistance was measured in plasma-implanted samples at 7 keV (in comparison with beam-line implanted samples), which is partly related to N outdiffusion. The profiles of N atoms beam-implanted at 7 keV are not affected by the annealing. The corresponding electrical activation is fully completed.

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Periodical:

Advanced Materials Research (Volume 324)

Pages:

265-268

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.324.265

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Online since:

August 2011

Authors:

Laurent Ottaviani, Stéphane Biondo, Michel Kazan, Olivier Palais, Julian Duchaine, Frédéric Milesi, Rachid Daineche, Blandine Courtois, Frank Torregrosa

Keywords:

Infra Red Reflectivity, Ion Implantation, Nitrogen, Plasma, RBS-C, Silicon Carbide (SiC), SIMS

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References

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