Calculation of Electronic and Optical Properties of Zinc-Blende MGX ZN1-X S

Nadjla Mostefai; Nadir Bouarissa; Abdelhak Belkhir

doi:10.4028/www.scientific.net/AMR.324.249

Paper Titles

Annealing Effects on Electrical and Optical Properties of N-ZnO/P-Si Heterojunction Diodes
p.233

Nonlinear Electrodynamic and Optical Properties of Graphene
p.237

Effect of ZnO Nano-Oxide Addition on the Superconducting Properties of the (Bi.Pb)2223 Phase
p.241

Electrical and Optical Properties of Indium-Modified SeSbTe Thin Films for Low Power Memory Devices
p.245

Calculation of Electronic and Optical Properties of Zinc-Blende MG_X ZN_1-X S
p.249

Structural, Optical and Electrical Properties of ZnO Sprayed Thin Films Doped with Fluorine
p.253

Segregation and Clustering Effects on Complex Boron Redistribution in Strongly Doped Polycrystalline-Silicon Layers
p.257

Modeling of the Boron Emitter Formation Process from BCl₃ Diffusion for N-Type Silicon Solar Cells Processing
p.261

Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers: A Comparison between Standard and Plasma Immersion Processes
p.265

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 324Calculation of Electronic and Optical Properties...

Calculation of Electronic and Optical Properties of Zinc-Blende MG_X ZN_1-X S

Abstract:

The electronic and optical properties of the MgxZn1-xS semiconductor ternary alloys crystallizing in the Zinc Blende structure are calculated using the empirical pseudopotential method (EPM) coupled with the virtual crystal approximation (VCA). The composition dependence of the direct and indirect band gap energies as well as the antisymmetric gap are investigated in the composition range 0 up to 1. Other quantities such as refractive index and coefficient of reflection are also obtained by means of different existing models. Our results are generally in good agreement with those available in the literature. The obtained informations could be useful for the feature design of blue wavelength optoelectronic devices.