Segregation and Clustering Effects on Complex Boron Redistribution in Strongly Doped Polycrystalline-Silicon Layers

Salah Abadli; Farida Mansour

doi:10.4028/www.scientific.net/AMR.324.257

Paper Titles

Effect of ZnO Nano-Oxide Addition on the Superconducting Properties of the (Bi.Pb)2223 Phase
p.241

Electrical and Optical Properties of Indium-Modified SeSbTe Thin Films for Low Power Memory Devices
p.245

Calculation of Electronic and Optical Properties of Zinc-Blende MG_X ZN_1-X S
p.249

Structural, Optical and Electrical Properties of ZnO Sprayed Thin Films Doped with Fluorine
p.253

Segregation and Clustering Effects on Complex Boron Redistribution in Strongly Doped Polycrystalline-Silicon Layers
p.257

Modeling of the Boron Emitter Formation Process from BCl₃ Diffusion for N-Type Silicon Solar Cells Processing
p.261

Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers: A Comparison between Standard and Plasma Immersion Processes
p.265

Weak Localization and Universal Conductance Fluctuations on Epitaxial Graphene Grown on the C-Face of 8°off-Axis 4H-SiC Substrates
p.269

Analytical Method to Calibrate Cylindrical LaBr₃(Ce) Scintillation Detector
p.273

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 324Segregation and Clustering Effects on Complex...

Segregation and Clustering Effects on Complex Boron Redistribution in Strongly Doped Polycrystalline-Silicon Layers

Abstract:

This work deals with the investigation of the complex phenomenon of boron (B) transient enhanced diffusion (TED) in strongly implanted silicon (Si) layers. It concerns the instantaneous influences of the strong B concentrations, the Si layers crystallization, the clustering and the B trapping/segregation during thermal post-implantation annealing. We have used Si thin layers obtained from disilane (Si₂H₆) by low pressure chemical vapor deposition (LPCVD) and then B implanted with a dose of 4×1015 atoms/cm2 at an energy of 15 keV. To avoid long redistributions, thermal annealing was carried out at relatively low-temperatures (700, 750 and 800 °C) for various short-times ranging between 1 and 30 minutes. To investigate the experimental secondary ion mass spectroscopy (SIMS) doping profiles, a redistribution model well adapted to the particular structure of Si-LPCVD layers and to the effects of strong-concentrations has been established. The good adjustment of the simulated profiles with the experimental SIMS profiles allowed a fundamental understanding about the instantaneous physical phenomena giving and disturbing the TED process in strongly doped Si-LPCVD layers. It was found that boron TED is strongly affected by the simultaneous complex kinetics of clustering, crystallization, trapping and segregation during annealing. The fast formation of small Si–B clusters enhances the B diffusivity whereas the evolution of the clusters and segregation reduce this enhancement.