Electrical and Optical Properties of Indium-Modified SeSbTe Thin Films for Low Power Memory Devices

Abstract:

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The electrical and optical characteristics of indium doped Se2Sb2Te6 phase-change alloy are studied. It is found that adding indium to Se2Sb2Te6 alloy (In0.3Se2Sb2Te6) increased the crystallization temperature and reduced the electrical conduction activation energy. The capacitance-temperature measurements showed a drastic change in the capacitance of the modified film when the temperature approaches the crystallization temperature, and eventually the capacitance becomes negative and nonlinear. The negativity and nonlinearity in the capacitancevoltage dependence can be attributed to the growth of conductive crystalline islands by increasing the temperature.

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Periodical:

Edited by:

Maher Soueidan, Mohamad Roumié and Pierre Masri

Pages:

245-248

DOI:

10.4028/www.scientific.net/AMR.324.245

Citation:

H. Ghamlouche et al., "Electrical and Optical Properties of Indium-Modified SeSbTe Thin Films for Low Power Memory Devices", Advanced Materials Research, Vol. 324, pp. 245-248, 2011

Online since:

August 2011

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$35.00

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