Electrical and Optical Properties of Indium-Modified SeSbTe Thin Films for Low Power Memory Devices

Hassan Ghamlouche; Saleh Thaker Mahmoud; Naser Qamhieh; Ahmad I. Ayesh

doi:10.4028/www.scientific.net/AMR.324.245

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 324Electrical and Optical Properties of...

Electrical and Optical Properties of Indium-Modified SeSbTe Thin Films for Low Power Memory Devices

Abstract:

The electrical and optical characteristics of indium doped Se₂Sb₂Te₆ phase-change alloy are studied. It is found that adding indium to Se2Sb2Te6 alloy (In_0.3Se₂Sb₂Te₆) increased the crystallization temperature and reduced the electrical conduction activation energy. The capacitance-temperature measurements showed a drastic change in the capacitance of the modified film when the temperature approaches the crystallization temperature, and eventually the capacitance becomes negative and nonlinear. The negativity and nonlinearity in the capacitancevoltage dependence can be attributed to the growth of conductive crystalline islands by increasing the temperature.

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Periodical:

Advanced Materials Research (Volume 324)

Pages:

245-248

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.324.245

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Online since:

August 2011

Authors:

Hassan Ghamlouche, Saleh Thaker Mahmoud, Naser Qamhieh, Ahmad I. Ayesh

Keywords:

Amorphous Films, Capacitance-Voltage, Phase-Change, Se-Sb-Te

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