LIBS for the Analysis of Metallurgical and Solar Grade Silicon

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Laser-induced breakdown spectroscopy (LIBS) has been employed for the fast and reliable chemical characterization of silicon used for the photovoltaic industry. Silicon for photovoltaic panels is subject to certain constraints on its purity, and notably must contain low concentration of boron. The use of LIBS could be advantageous because it allows rapid and simultaneous multi-elemental chemical analysis of silicon without any sample preparation. LIBS was applied to boron analysis and a detection limit of 0.23 ppmw was found for optimized gas and pressure conditions.

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324-327

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August 2011

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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[1] C. Pasquini, J. Cortez, L. M. C. Silva, F. B. Gonzaga, Laser Induced Breakdown Spectroscopy, J. Braz. Chem. Soc. 18, (2007) 463-512.

DOI: 10.1590/s0103-50532007000300002

Google Scholar

[2] D. Romero, J. M. F. Romero, J. J. Laserna, Distribution of metal impurities in silicon wafers using imaging-mode multi-elemental LIBS, J. Anal. At. Spectros. 14 (1999) 199-204.

DOI: 10.1039/a807362g

Google Scholar

[3] D. Romero, J. J. Laserna, Multielemental Chemical Imaging Using laser-induced breakdown spectrometry, Anal.Chem. 69 (1997) 2871-2876.

DOI: 10.1021/ac9703111

Google Scholar

[4] M. Milan, P. Lucena, C. L. Cabalin, J. J. Laserna, Depth profiling of phosphorous in photonic-grade silicon using laser-induced breakdown spectrometry, Appl. Spectros. 52 (1998) 444-448.

DOI: 10.1366/0003702981943662

Google Scholar

[5] D. Romero, J. J Laserna, Surface and tomographic distribution of carbon impurities in photonic-grade using laser-induced breakdown spectroscopy, J. Anal. At. Spectros. 13 (1998) 557-560.

DOI: 10.1039/a707783a

Google Scholar

[6] S.Darwiche, M. Benmansour, N. Eliezer, D. Morvan, Investigation of optimized experimental parameters including laser wavelength for boron measurement in photovoltaic grade silicon using laser-induced breakdown spectroscopy, Spectrochim. Act. Part B 65 (2010) 738–743.

DOI: 10.1016/j.sab.2010.04.014

Google Scholar

[7] J. Bengoechea, J.A. Aguilera, C. Aragon, Application of laser-induced plasma spectroscopy to the measurement of Stark broadening, Spectrochim. Acta Part B 61 (2006) 69-80.

DOI: 10.1016/j.sab.2005.11.003

Google Scholar

[8] H.R. Griem, Plasma Spectroscopy, McGraw-Hill Book Company, New York, 1964.

Google Scholar

[9] S. Darwiche, M. Benmansour, N. Eliezer, D. Morvan, Quantitative analysis of boron in wafers and MG silicon using laser induced breakdown spectroscopy, JOAM 12 (2010) 681-685.

DOI: 10.1016/j.sab.2010.04.014

Google Scholar