A Study on Optical and Electrical Properties of Solar Cells of a-Si1-XGeX:H

Abstract:

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The AMPS-ID program is used to investigate optical and electrical properties of the solar cell of a-SiC:H/a-Si1-xGex:H/a-Si:H thin films. The short circuit current density, open circuit voltage, fill factor and conversion efficiency of the solar cell are investigated. For x=0.1, the conversion efficiency of the solar cell achieve maximum 9.19 % at the a-Si1-xGex:H thickness of 340 nm.

Info:

Periodical:

Advanced Materials Research (Volumes 347-353)

Edited by:

Weiguo Pan, Jianxing Ren and Yongguang Li

Pages:

3666-3669

DOI:

10.4028/www.scientific.net/AMR.347-353.3666

Citation:

M. B. Li and L. B. Shi, "A Study on Optical and Electrical Properties of Solar Cells of a-Si1-XGeX:H", Advanced Materials Research, Vols. 347-353, pp. 3666-3669, 2012

Online since:

October 2011

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Price:

$35.00

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