A Study on Optical and Electrical Properties of Solar Cells of a-Si1-XGeX:H

Ming Biao Li; Li Bin Shi

doi:10.4028/www.scientific.net/AMR.347-353.3666

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 347-353A Study on Optical and Electrical Properties of...

A Study on Optical and Electrical Properties of Solar Cells of a-Si_1-XGe_X:H

Abstract:

The AMPS-ID program is used to investigate optical and electrical properties of the solar cell of a-SiC:H/a-Si1-xGex:H/a-Si:H thin films. The short circuit current density, open circuit voltage, fill factor and conversion efficiency of the solar cell are investigated. For x=0.1, the conversion efficiency of the solar cell achieve maximum 9.19 % at the a-Si1-xGex:H thickness of 340 nm.

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Periodical:

Advanced Materials Research (Volumes 347-353)

Pages:

3666-3669

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.347-353.3666

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Online since:

October 2011

Authors:

Ming Biao Li, Li Bin Shi

Keywords:

Semiconductor, Solar Cell, Thin Film

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