Ultraviolet Sensing by Al-Doped ZnO Thin Films

Affa Rozana Abdul Rashid; P. Susthitha Menon; N. Arsad; S. Shaari

doi:10.4028/www.scientific.net/AMR.364.154

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 364Ultraviolet Sensing by Al-Doped ZnO Thin Films

Ultraviolet Sensing by Al-Doped ZnO Thin Films

Abstract:

We report the fabrication and characterization of an ultraviolet photoconductive sensing by using Al-doped ZnO films. Undoped ZnO, 1 at.% and 2 at% of Al were prepared on quartz glass by sol gel method with annealing temperature of 500°C for 1 hour. The presence of spherical shaped nanoparticles were detected for undoped ZnO by using FESEM. The absorption edge shifted to a lower wavelength by doping with Al and excitonic peak can be observed. The band gap values increased by adding Al. I-V curves reveal an ohmic line and improvement in electrical conductivity when the samples are illuminated by ultraviolet (UV) light with a wavelength of 365 nm. At 1 at.% of Al, the film have a larger increment in photocurrent response when illuminated with UV light compared to undoped ZnO and 2 at.% Al. The thin films have a longer recovery time than response time.

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Periodical:

Advanced Materials Research (Volume 364)

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154-158

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https://doi.org/10.4028/www.scientific.net/AMR.364.154

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October 2011

Authors:

Affa Rozana Abdul Rashid, P. Susthitha Menon, N. Arsad, S. Shaari

Keywords:

Al-Doped ZnO, UV Sensing

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