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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 364Characterization of GaN p-n Junction Grown on Si...

Characterization of GaN p-n Junction Grown on Si (111) Substrate by Plasma-Assisted Molecular Beam Epitaxy

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Abstract:

In this report, the growth of GaN p-n junction on Si (111) substrate by plasma-assisted molecular beam epitaxy (PAMBE) is demonstrated. Doping of the GaN p-n junction has been carried out using Si and Mg as n-type and p-type dopants, respectively. Silicon substrate is used to grow the GaNpn-junction. In order to improve the crystalline quality of the nitride based junction, AlN is used as a buffer layer. The optical properties of the sample have been characterized by photoluminescence (PL) and Raman spectroscopy.PL spectrum shows a strong band edge emission of GaN at ~364nm, indicating good quality of the sample.The presence of peak ~657cm^-1 in Raman measurement has exhibited asuccessful doping of Mg in the sample. The structural properties are measured by high-resolution x-ray diffraction (HR-XRD) and scanning electron microscopy (SEM). The cross section of the SEM image of the sample has shown sharp interfaces.

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Periodical:

Advanced Materials Research (Volume 364)

Pages:

139-143

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.364.139

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Online since:

October 2011

Authors:

Rosfariza Radzali, Mohd Anas Ahmad, Hassan Zainuriah, Norzaini Zainal, Fong Kwong Yam, Chin Che Woei, Mohd Zaki Mohd Yusoff, Siti Khadijah Mohd Bakhori, Yushamdan Yusof

Keywords:

Gallium Nitride (GaN), III-Nitrides, Plasma-Assistedmolecular Beam Epitaxy, Pn Junction

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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