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Rectifying Behavior of Aligned ZnO Nanorods on Mg0.3Zn0.7O Thin Film Template

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Abstract:

Rectifying behavior more than 3 orders of aligned zinc oxide (ZnO) nanorods grown on Mg0.3Zn0.7O thin film template using chemical bath deposition method was observed, giving a barrier height of 0.75 eV, and the ideality factor achieved was almost 6, which was analyzed using thermionic emission theory. Field emission scanning electron microscope (FESEM) images revealed that the grown ZnO was in hexagonal shape, uniformly distributed and in vertically aligned form. The crystallinity of the sample being studied using X-ray diffraction (XRD), where the highest peak was found at (002) phase, confirming that high crytallinity of ZnO was attained. The effect of metal/semiconductor junction between metal and aligned ZnO nanorods was discussed in further details.

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Periodical:

Advanced Materials Research (Volume 364)

Pages:

35-39

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.364.35

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Online since:

October 2011

Authors:

Salina Muhamad, Suriani Abu Bakar, Mohamad Hafiz Mamat, Rafidah Ahmad, Mohamad Rusop

Keywords:

Barrier Height, MgZnO, Rectifying, ZnO Nanorod

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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