Density of States Extraction in Bulk Channel Area of a-Si:H Thin-Film Transistors by Using Low-Frequency Noise Analysis
Density of states in the channel bulk area of a-Si:H thin-film transistors (TFTs) was extracted by using low-frequency noise analysis. The drain current noise power spectral density shows 1/ƒγ behavior at relatively high frequencies (ƒ > 1 kHz), which is due to the exponential distribution of tail states. For the analysis, the modified number fluctuation model which is correlated with mobility fluctuation was used. From the relationship (γ=1- kT/Et ) between exponent γ and the slope of exponential distribution Et of band tail states, the distribution of the band tail near conduction band was extracted.
Brendan Gan, Yu Gan and Y. Yu
K. Lee et al., "Density of States Extraction in Bulk Channel Area of a-Si:H Thin-Film Transistors by Using Low-Frequency Noise Analysis", Advanced Materials Research, Vols. 378-379, pp. 642-645, 2012