Density of States Extraction in Bulk Channel Area of a-Si:H Thin-Film Transistors by Using Low-Frequency Noise Analysis

Abstract:

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Density of states in the channel bulk area of a-Si:H thin-film transistors (TFTs) was extracted by using low-frequency noise analysis. The drain current noise power spectral density shows 1/ƒγ behavior at relatively high frequencies (ƒ > 1 kHz), which is due to the exponential distribution of tail states. For the analysis, the modified number fluctuation model which is correlated with mobility fluctuation was used. From the relationship (γ=1- kT/Et ) between exponent γ and the slope of exponential distribution Et of band tail states, the distribution of the band tail near conduction band was extracted.

Info:

Periodical:

Advanced Materials Research (Volumes 378-379)

Edited by:

Brendan Gan, Yu Gan and Y. Yu

Pages:

642-645

DOI:

10.4028/www.scientific.net/AMR.378-379.642

Citation:

K. Lee et al., "Density of States Extraction in Bulk Channel Area of a-Si:H Thin-Film Transistors by Using Low-Frequency Noise Analysis", Advanced Materials Research, Vols. 378-379, pp. 642-645, 2012

Online since:

October 2011

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Price:

$35.00

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