Density of States Extraction in Bulk Channel Area of a-Si:H Thin-Film Transistors by Using Low-Frequency Noise Analysis

Kyunghwan Lee; Younghwan Son; Jaeho Lee; Jae Hong Lee; Seunghyun Jang; Jung Jin Park; Shinhyung Kim; Hyung Cheol Shin

doi:10.4028/www.scientific.net/AMR.378-379.642

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 378-379Density of States Extraction in Bulk Channel Area...

Density of States Extraction in Bulk Channel Area of a-Si:H Thin-Film Transistors by Using Low-Frequency Noise Analysis

Abstract:

Density of states in the channel bulk area of a-Si:H thin-film transistors (TFTs) was extracted by using low-frequency noise analysis. The drain current noise power spectral density shows 1/ƒγ behavior at relatively high frequencies (ƒ > 1 kHz), which is due to the exponential distribution of tail states. For the analysis, the modified number fluctuation model which is correlated with mobility fluctuation was used. From the relationship (γ=1- kT/Et ) between exponent γ and the slope of exponential distribution Et of band tail states, the distribution of the band tail near conduction band was extracted.

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Advanced Materials Research (Volumes 378-379)

Pages:

642-645

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.378-379.642

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Online since:

October 2011

Authors:

Kyunghwan Lee, Younghwan Son, Jaeho Lee, Jae Hong Lee, Seunghyun Jang, Jung Jin Park, Shinhyung Kim, Hyung Cheol Shin

Keywords:

Amorphous Silicon, Low-Frequency Noise, Tail States, Thin Film Transistor

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