The Study of p-n and Schottky Junction for Magnetodiode

Abstract:

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This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.

Info:

Periodical:

Advanced Materials Research (Volumes 378-379)

Edited by:

Brendan Gan, Yu Gan and Y. Yu

Pages:

663-667

DOI:

10.4028/www.scientific.net/AMR.378-379.663

Citation:

T. Phetchakul et al., "The Study of p-n and Schottky Junction for Magnetodiode", Advanced Materials Research, Vols. 378-379, pp. 663-667, 2012

Online since:

October 2011

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Price:

$35.00

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