The Study of p-n and Schottky Junction for Magnetodiode

Toempong Phetchakul; Wittaya Luanatikomkul; Chana Leepattarapongpan; E. Chaowicharat; Putapon Pengpad; Amporn Poyai

doi:10.4028/www.scientific.net/AMR.378-379.663

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The Study of p-n and Schottky Junction for Magnetodiode
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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 378-379The Study of p-n and Schottky Junction for...

The Study of p-n and Schottky Junction for Magnetodiode

Abstract:

This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.