Growth and Characterization of ZnO Thin Films Grown by Pulsed Laser Deposition

Abstract:

ZnO thin films were deposited on n-Si (111) substrates at various oxygen partial pressures by pulsed laser deposition (PLD). X-ray diffraction (XRD), scanning electron microscopy (SEM) were used to analyze the influence of the oxygen partial pressure on the crystallization and morphology of the ZnO thin films. An optimal crystallized ZnO thin film was observed at the oxygen partial pressure of 6.5Pa. X-ray photoelectron spectroscopy (XPS) was used to analyze the surface components and distribution status of various elments in ZnO thin films. It was found that ZnO thin films were grown in Zn-rich state.

• Periodical: Advanced Materials Research (Volumes 383-390)
• Pages: 6289-6292
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.383-390.6289
• Online since: November 2011
• Authors: Jian Ting He, Bo Xue Tan, Qin Qin Wei, Yuan Bin Su, Shu Lian Yang
• Keywords: Pulsed Laser Deposition (PLD), XPS, Zinc Oxide (ZnO), Zn-Rich

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