Growth and Characterization of ZnO Thin Films Grown by Pulsed Laser Deposition

Abstract:

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ZnO thin films were deposited on n-Si (111) substrates at various oxygen partial pressures by pulsed laser deposition (PLD). X-ray diffraction (XRD), scanning electron microscopy (SEM) were used to analyze the influence of the oxygen partial pressure on the crystallization and morphology of the ZnO thin films. An optimal crystallized ZnO thin film was observed at the oxygen partial pressure of 6.5Pa. X-ray photoelectron spectroscopy (XPS) was used to analyze the surface components and distribution status of various elments in ZnO thin films. It was found that ZnO thin films were grown in Zn-rich state.

Info:

Periodical:

Advanced Materials Research (Volumes 383-390)

Edited by:

Wu Fan

Pages:

6289-6292

DOI:

10.4028/www.scientific.net/AMR.383-390.6289

Citation:

J. T. He et al., "Growth and Characterization of ZnO Thin Films Grown by Pulsed Laser Deposition", Advanced Materials Research, Vols. 383-390, pp. 6289-6292, 2012

Online since:

November 2011

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Price:

$35.00

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