XPS Analysis of ZnO Thin Films Obtained by Pulsed Laser Deposition
Highly c-axis oriented ZnO thin films were deposited on n-Si (111) substrate at various oxygen partial pressures by pulsed laser deposition (PLD). X-ray diffraction (XRD), Atomic force microscopy (AFM) were used to analyze the influence of the oxygen partial pressure on the crystallization and morphology of the ZnO thin films. X-ray photoelectron spectroscopy (XPS) was used to analyze relationships between chemical shifts of XPS energy spectra and stoichiometric ratios of ZnO thin films, and quantitative relationships between content of Zn, O and oxygen partial pressures. An optimal crystallized and stoichiometric ZnO thin film was observed at the oxygen partial pressure of 6.5Pa.
J. T. He et al., "XPS Analysis of ZnO Thin Films Obtained by Pulsed Laser Deposition", Advanced Materials Research, Vols. 383-390, pp. 6293-6296, 2012