XPS Analysis of ZnO Thin Films Obtained by Pulsed Laser Deposition

Abstract:

Highly c-axis oriented ZnO thin films were deposited on n-Si (111) substrate at various oxygen partial pressures by pulsed laser deposition (PLD). X-ray diffraction (XRD), Atomic force microscopy (AFM) were used to analyze the influence of the oxygen partial pressure on the crystallization and morphology of the ZnO thin films. X-ray photoelectron spectroscopy (XPS) was used to analyze relationships between chemical shifts of XPS energy spectra and stoichiometric ratios of ZnO thin films, and quantitative relationships between content of Zn, O and oxygen partial pressures. An optimal crystallized and stoichiometric ZnO thin film was observed at the oxygen partial pressure of 6.5Pa.

• Periodical: Advanced Materials Research (Volumes 383-390)
• Pages: 6293-6296
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.383-390.6293
• Online since: November 2011
• Authors: Jian Ting He, Bo Xue Tan, Yuan Bin Su, Shu Lian Yang, Qin Qin Wei
• Keywords: Oxygen Partial Pressure, Pulsed Laser Deposition (PLD), XPS, Zinc Oxide (ZnO)

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