XPS Analysis of ZnO Thin Films Obtained by Pulsed Laser Deposition

Abstract:

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Highly c-axis oriented ZnO thin films were deposited on n-Si (111) substrate at various oxygen partial pressures by pulsed laser deposition (PLD). X-ray diffraction (XRD), Atomic force microscopy (AFM) were used to analyze the influence of the oxygen partial pressure on the crystallization and morphology of the ZnO thin films. X-ray photoelectron spectroscopy (XPS) was used to analyze relationships between chemical shifts of XPS energy spectra and stoichiometric ratios of ZnO thin films, and quantitative relationships between content of Zn, O and oxygen partial pressures. An optimal crystallized and stoichiometric ZnO thin film was observed at the oxygen partial pressure of 6.5Pa.

Info:

Periodical:

Advanced Materials Research (Volumes 383-390)

Edited by:

Wu Fan

Pages:

6293-6296

DOI:

10.4028/www.scientific.net/AMR.383-390.6293

Citation:

J. T. He et al., "XPS Analysis of ZnO Thin Films Obtained by Pulsed Laser Deposition", Advanced Materials Research, Vols. 383-390, pp. 6293-6296, 2012

Online since:

November 2011

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Price:

$35.00

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