Gamma Irradiation Effect on Load-Deflection Curve of Semiconductor Package

Azman Jalar; Wan Yusmawati Wan Yusoff; Norinsan Kamil Othman; Shahrum Abdullah; Irman Abdul Rahman

doi:10.4028/www.scientific.net/AMR.399-401.912

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 399-401Gamma Irradiation Effect on Load-Deflection Curve...

Gamma Irradiation Effect on Load-Deflection Curve of Semiconductor Package

Abstract:

The effect of different doses of gamma radiation (0.5 Gy, 1.5 Gy, 5.0 Gy, 10.0 Gy and 50 kGy) on the maximum load and deflection of the Single Die Quad Flat No Lead (SDQFN) semiconductor package has been investigated. The three-point technique was carried out to obtain the maximum load and deflection of the package. The results of irradiated SDQFN show the decreasing in their maximum load and deflection with the increasing of gamma irradiation dose. The higher gamma irradiation dose produced the more significant change in the load-deflection behaviour of the irradiated SDQFN. The package becomes prone to failure when exposed to the radiation environment.

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Periodical:

Advanced Materials Research (Volumes 399-401)

Pages:

912-915

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.399-401.912

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Online since:

November 2011

Authors:

Azman Jalar, Wan Yusmawati Wan Yusoff, Norinsan Kamil Othman, Shahrum Abdullah, Irman Abdul Rahman

Keywords:

Gamma Irradiation, Load-Deflection Curve, SDQFN, Three-Point Bending

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