Highly C-Axis Oriented Barium Titanate Ferroelectric Films Deposited on SrTiO3 Substrate Using an Off-Axis Sputtered Conductive Oxide Layer as Bottom Electrode

Wei Zhang; Mei Ling Yuan; Xian Yang Wang; Jun Ouyang

doi:10.4028/www.scientific.net/AMR.399-401.926

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 399-401Highly C-Axis Oriented Barium Titanate...

Highly C-Axis Oriented Barium Titanate Ferroelectric Films Deposited on SrTiO₃ Substrate Using an Off-Axis Sputtered Conductive Oxide Layer as Bottom Electrode

Abstract:

BaTiO₃ (BTO) thin films were grown on (100) SrTiO₃ (STO) single crystal substrates using the RF-magnetron sputtering technique (RFMS) in both pure argon and mixed Ar/O₂ (20% O₂) atmosphere. A La_0.5Sr_0.5CoO₃ (LSCO) layer was deposited as the bottom electrode by a 90° off-axis single-target RFMS. θ-2θ X-ray diffraction measurements showed that BTO thin films grown in both cases had a highly preferred c-axis orientation (001). From hysteresis measurements, it was confirmed that both films are ferroelectric. The ferroelectric polarizations 2Pr were 6.6 μC/cm² and 27.1 μC/cm², for the BTO films grown in pure argon and in mixed Ar/O₂ atmosphere, respectively.

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Periodical:

Advanced Materials Research (Volumes 399-401)

Pages:

926-929

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.399-401.926

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Online since:

November 2011

Authors:

Wei Zhang, Mei Ling Yuan, Xian Yang Wang, Jun Ouyang

Keywords:

BaTiO₃, Ferroelectric Films, Off-Axis Sputtering, Preferred Orientation, RF Magnetron Sputtering

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