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The Research about the III-Nitride Compounds Epitaxially Grown on Si Substrate

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Abstract:

The III-nitride compounds epitaxially grown on Si substrate have attracted more and more attentions and some progress have been achieved. Many methods have been tried to tackle the issue which caused by the large lattice mismatch and thermal expansion coefficient mismatches between silicon substrate and the III-nitride compounds. This paper presents buffer layer technology, selective area and lateral epitaxial over growth technology, and presents the researches about the III-nitride devices. Semi polar and non-polar GaN films grown on Si (such as Si(110), Si(112), Si(001) et al.) also have been instructed. At the end of this paper, the development trend of epitaxial technology has been discussed.

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Periodical:

Advanced Materials Research (Volumes 399-401)

Pages:

935-944

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https://doi.org/10.4028/www.scientific.net/AMR.399-401.935

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Online since:

November 2011

Authors:

Ai Ping Zhao, Hong Deng, Feng Liu, Xue Ran Deng

Keywords:

Epitaxial, III-Nitride, Silicon Substrate

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