Investigation on the Morphologies of Dislocations in Sapphire Crystals

Yu Sun; Hong Jian Chen; Wen Bo Yan; Cai Chi Liu

doi:10.4028/www.scientific.net/AMR.399-401.954

Paper Titles

Effect of Eu³⁺ on Spectroscopic Properties and Energy Transfer in Er³⁺/Eu³⁺-Doped Ga₂O₃-GeO₂ Glass
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The Research about the III-Nitride Compounds Epitaxially Grown on Si Substrate
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Synthesis, Photochromism and Optical Storage of a New Type of Diarylethene Compound
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Preparation of Magnetic Fe₃O₄ Nanoparticles by Microbial Reduction Combining Natural Oxidation Method
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Investigation on the Morphologies of Dislocations in Sapphire Crystals
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The Dielectric Tunability of Fe-Doped Pb_0.3Sr_0.7TiO₃ Thin Films Prepared by Sol-Gel Method
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Synthesis and Photoluminescence Properties of Doped Europium Complexes with 2-Pyrazinecarboxylate
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Photoluminescence Properties of Sm³⁺-Doped La₂O₃ Powders
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Electrochemical Synthesis and Photovoltaic Properties of Polythiothene/CdSe Double Layers Electrode
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Investigation on the Morphologies of Dislocations in Sapphire Crystals

Abstract:

Sapphire single crystal is widely used in a variety of modern applications from GaN-based LED to military optical systems because of its excellent combination of optical, mechanical, thermal and chemical properties. The dislocations affecting the quality of sapphire crystal were studied by chemical etching and optical microscopy in this paper. The experimental results showed that the dislocation corrosion pits of (11-20) plane in sapphire crystals grown by Kyropoulos method is diamond-shaped and (1-102) plane is isosceles triangle and the density of dislocations in samples grown by Czochralski method is about two orders of magnitude higher than that in samples grown by Vertical Bridgman method. The formation mechanism of defects and proposes was also discussed.