Electrical Characteristics and Microstructures of Eu2O3-Doped Bi4Ti3O12 Thin Films

Min Chen; X.A. Mei; A.H. Cai; J. Liu; Chong Qing Huang

doi:10.4028/www.scientific.net/AMR.412.294

Paper Titles

Influence of Lanthanum on Microstructure and Dielectric Properties of Barium Titanate Ceramics by Solid State Reaction
p.275

Low Temperature Sintering and Microwave Dielectric Properties of Ba₄Nd_9.33Ti₁₈O₅₄ Ceramics Doped with Crystallizable Glass
p.280

Structure and Piezoelectric Properties of (K,Na)NbO₃ Ceramics Fabricated from Microwave Hydrothermal Synthesized Powders
p.285

Effect of Low-Temperature Frit on the Sintering Behavior and Properties of 0.95K_0.49Na_0.51NbO₃-0.05LiSbO₃ Lead-Free Piezoceramics
p.290

Electrical Characteristics and Microstructures of Eu₂O₃-Doped Bi₄Ti₃O₁₂ Thin Films
p.294

Electrical Characteristics and Microstructures of Ce₂O₃-Doped Bi₄Ti₃O₁₂ Ceramics
p.298

Ferroelectric Properties and Microstructures of La₂O₃-Doped Bi₄Ti₃O₁₂ Ceramics
p.302

Ferroelectric Properties of Bismuth Titanate Ceramics by Dy³⁺/V⁵⁺ Substitution
p.306

Ferroelectric Properties of Bi_3.25La_0.75Ti_2.97V_0.03O₁₂
p.310

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Electrical Characteristics and Microstructures of Eu₂O₃-Doped Bi₄Ti₃O₁₂ Thin Films

Abstract:

Eu₂O₃-doped bismuth titanate (Bi_4-xEu_xTi₃O₁₂: BET) thin films with random oriention were fabricated on Pt/Ti/SiO₂/Si substrates by rf magnetron sputtering technique, and the structures and ferroelectric properties of the films were investigated. XRD studies indicated that all of BET films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization ( P_r ) and coercive field (E_c) of the BET Film with x=0.8 were 20μC/cm² and 65KV/cm , respectively. After 3×10¹⁰ switching cycles, 15% degradation of P_r is observed in the film.