Ferroelectric Properties of Bismuth Titanate Ceramics by Dy3+/V5+ Substitution

Chong Qing Huang; Min Chen; X.A. Mei; Y.H. Sun; J. Liu

doi:10.4028/www.scientific.net/AMR.412.306

Paper Titles

Effect of Low-Temperature Frit on the Sintering Behavior and Properties of 0.95K_0.49Na_0.51NbO₃-0.05LiSbO₃ Lead-Free Piezoceramics
p.290

Electrical Characteristics and Microstructures of Eu₂O₃-Doped Bi₄Ti₃O₁₂ Thin Films
p.294

Electrical Characteristics and Microstructures of Ce₂O₃-Doped Bi₄Ti₃O₁₂ Ceramics
p.298

Ferroelectric Properties and Microstructures of La₂O₃-Doped Bi₄Ti₃O₁₂ Ceramics
p.302

Ferroelectric Properties of Bismuth Titanate Ceramics by Dy³⁺/V⁵⁺ Substitution
p.306

Ferroelectric Properties of Bi_3.25La_0.75Ti_2.97V_0.03O₁₂
p.310

Electrical Characteristics and Microstructures of Gd-Doped Bi₄Ti₃O₁₂ Ceramics
p.314

Electrical Characterization and Microstructures of La-Doped Bi₄Ti₃O₁₂ Thin Films
p.318

Electrical Characteristics and Microstructures of Dy-Doped Bi₄Ti₃O₁₂ Ceramics
p.322

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Ferroelectric Properties of Bismuth Titanate Ceramics by Dy³⁺/V⁵⁺ Substitution

Abstract:

The ferroelectricity of Bi_3.25Dy_0.75Ti₃O₁₂ (BDT), and Bi_3.25Dy_0.75Ti_2.97V_0.03O₁₂ (BDTV) ceramics prepared at 1100°C by a conventional ceramic technique was investigated. These ceramics possess random-oriented polycrystalline structure. The remanent polarization (P_r) and coercive field (E_c) of the BDT ceramics are 15 µC/cm² and 64kV/cm, respectively. Furthermore, V substitution improves the P_r value of the BDT ceramics up to 23 μC/cm², which is much larger than that of the BDT ceramics. Therefore, co-sustitution of D and V in Bi₄Ti₃O₁₂(BIT) ceramic is effective for the improvement of its ferroelectricity.