Electrical Characterization and Microstructures of La-Doped Bi₄Ti₃O₁₂ Thin Films

Abstract:

La-doped bismuth titanate (Bi_4-xLa_xTi₃O₁₂: BLT) and pure Bi₄Ti₃O₁₂ (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO₂/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. La-doping into BIT caused a large shift of the Curie temperature ( T_C ) from 675°C to lower temperature and a improvement in dielectric property. The experimental results indicated that La doping into BIT also result in a remarkable improvement in ferroelectric property. The P_r and the E_c values of the BLT film with x=0.75 were 20 μC/cm² and 82kV/cm, respectively.

• Periodical: Advanced Materials Research (Volume 412)
• Pages: 318-321
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.412.318
• Online since: November 2011
• Authors: X.A. Mei, Min Chen, R.F. Liu, Y.H. Sun, J. Liu
• Keywords: Dielectric, Ferroelectric, Film

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