Electrical Characteristics and Microstructures of Gd-Doped Bi₄Ti₃O₁₂ Ceramics

Abstract:

The electrical properties of Gd-doped bismuth titanates Bi_4-xGd_xTi₃O₁₂) prepared by a conventional ceramic technique have been investigated. At applied d.c. field below 200V/mm, the current-voltage curve of Gd-doped sample exhibits a negative differential resistance behavior. The conducting filamentary model has been used to explain the negative differential resistance phenomenon in Gd-doped bismuth titanates. The impedance spectrum of Gd sample indicates that both consist of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi₄Ti₃O₁₂ and the distribution of every element is uniform. Gd-doped sample exhibites randomly oriented and plate-like morphology.

• Periodical: Advanced Materials Research (Volume 412)
• Pages: 314-317
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.412.314
• Online since: November 2011
• Authors: J. Liu, Min Chen, X.A. Mei, Y.H. Sun, Chong Qing Huang
• Keywords: Bismuth Titanate, Electrical Properties, Impedance, Microstructure

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