Electrical Characteristics and Microstructures of Ce2O3-Doped Bi4Ti3O12 Ceramics

Min Chen; X.A. Mei; A.H. Cai; J. Liu; Chong Qing Huang

doi:10.4028/www.scientific.net/AMR.412.298

Paper Titles

Low Temperature Sintering and Microwave Dielectric Properties of Ba₄Nd_9.33Ti₁₈O₅₄ Ceramics Doped with Crystallizable Glass
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Structure and Piezoelectric Properties of (K,Na)NbO₃ Ceramics Fabricated from Microwave Hydrothermal Synthesized Powders
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Effect of Low-Temperature Frit on the Sintering Behavior and Properties of 0.95K_0.49Na_0.51NbO₃-0.05LiSbO₃ Lead-Free Piezoceramics
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Electrical Characteristics and Microstructures of Eu₂O₃-Doped Bi₄Ti₃O₁₂ Thin Films
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Electrical Characteristics and Microstructures of Ce₂O₃-Doped Bi₄Ti₃O₁₂ Ceramics
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Ferroelectric Properties and Microstructures of La₂O₃-Doped Bi₄Ti₃O₁₂ Ceramics
p.302

Ferroelectric Properties of Bismuth Titanate Ceramics by Dy³⁺/V⁵⁺ Substitution
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Ferroelectric Properties of Bi_3.25La_0.75Ti_2.97V_0.03O₁₂
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Electrical Characteristics and Microstructures of Gd-Doped Bi₄Ti₃O₁₂ Ceramics
p.314

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 412Electrical Characteristics and Microstructures of...

Electrical Characteristics and Microstructures of Ce₂O₃-Doped Bi₄Ti₃O₁₂ Ceramics

Abstract:

The electrical properties of Ce-doped bismuth titanate, Bi_4-xCe_xTi₃O₁₂ (BCT) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all samples. SEM micrographs showed randomly oriented and plate-like morphology. For the samples with x=0.4 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-E hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.6 and 0.8 the current-voltage characteristics showed simple ohmic behaviors and their P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( P_r ) and coercive field (E_c) of the BCT ceramic with x=0.8 were above 20μC/cm² and 60KV/cm , respectively.

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Periodical:

Advanced Materials Research (Volume 412)

Pages:

298-301

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https://doi.org/10.4028/www.scientific.net/AMR.412.298

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Online since:

November 2011

Authors:

Min Chen, X.A. Mei, A.H. Cai, J. Liu, Chong Qing Huang

Keywords:

Bismuth Titanate, Doping, Ferroelectric, Film

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