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Preparation and Gas-Sensing Properties of CdFe2O4 Semiconductor Materials
Abstract:
The gas-sensing materials, CdFe2O4, were prepared by inverse titration chemical co-precipitation with FeSO4⋅7H2O and CdCl2⋅2.5H2O. After calcinations at 300° ~ 700°C for 1h, respectively, n-type semiconductor gas-sensing materials with inverse spinel structure were obtained. Effects of the calcining temperature on the phase constituents and microstructure were characterized. The crystallite size of powders sintered at 700°C for 1h is 82 nm and dispersity good. Sensors based on CdFe2O4 were fabricated, and the gas-sensing properties were determined for using reducing gases. The results demonstrated that the sensors based on CdFe2O4 had good sensitivity and good selectivity to C2H5OH at 400°C. The difference in response for various tested gases might be attributed to absorption of reducing gases and reaction between these gases and the absorbed oxygen.
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331-335
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November 2011
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© 2012 Trans Tech Publications Ltd. All Rights Reserved
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