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High-Pressure Electronic and Optical Properties of α-Si3N4

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Abstract:

Based on the density functional theory, the plane-wave pseudo-potential method is performed to investigate the structural properties of α-Si3N4. The ground-state lattice parameters (i.e. lattice constants and cell volume) agree quite well with the experimental data. From the band structure calculation, we found that the stability of α-Si3N4 is due mainly to the interaction among the Si-s, Si-p and N-p states. The imaginary part of the dielectric function has a sharp peak at 8.2eV. For the real part of the dielectric function, the highest peak locates at 6.5eV. Our calculated results are in good agreement with the experimental data and previous theoretical values. Therefore, the calculated results may provide useful information for further investigations of α-Si3N4.

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Advanced Materials, ICAMMP 2011 View Preview

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Periodical:

Advanced Materials Research (Volumes 415-417)

Pages:

2288-2291

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.415-417.2288

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Online since:

December 2011

Authors:

Chang Chun Chen, Xiao Ju Geng, Ying Bin Li, Ben Hai Yu, Dong Chen

Keywords:

Band Structure, Dielectric Function, First-Principle

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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