Optical and Structural Properties of Yb-Doped ZnO Thin Waveguide Films with Er⁺ Ions Implantation

Abstract:

Yb-doped ZnO optical waveguide thin films were deposited on sapphire substrates by radiofrequency (RF) magnetron sputtering technology, and then Er⁺ ions with the energy of 200 KeV were implanted into the as-deposited films, the implantation dose was 1×10¹⁵ ions/cm². Optical waveguide properties and film thicknesses were studied by prism coupling method. Film thicknesses, element components and Er⁺ ions range distrbution were studied by Rutherford backscattering (RBS) technique. The basic structure and phase of the films were studied using X-ray diffraction (XRD). The properties of optical frequency upconwersion were investigated by fluorescence spectrometer. The results demonstrated that the Yb-doped ZnO films with Er-implantation have planar waveguide structure and the waveguide properties were changed compared with the virgin ZnO films. The effective refractive indices of the films decreasing with the amount of Yb-doped concentration increasing. Yb concentration in films associated with targets but more than that in them. The films shown the classic structure of c-axis preferred orientation. The compounds of Yb:Zn and Er:Zn were appeared in the films. Inspired the films by 980 nm laser in room temperature, stimulated optical emission between 300~720 nm was not observed.

• Periodical: Advanced Materials Research (Volume 465)
• Pages: 150-154
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.465.150
• Online since: February 2012
• Authors: Jun He Qi, Feng Xiang Wang, Fei Lu, Xin Feng Qin, Zhao Hong Liu, Guang Yang, Li Juan Li, Zhi Hua Chen, Hong Lian Song
• Keywords: Doped, ER, Ion Implantation, Waveguide Film, Yb, Zinc Oxide (ZnO)

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