Working Pressure Effect on the Microstructure and Electric Resistivity of SiC Films Produced by MF Magnetron Sputtering

Yang Yang Li; Jun Jie Hao; Rui Xin Wang; Fang Yang

doi:10.4028/www.scientific.net/AMR.468-471.1181

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 468-471Working Pressure Effect on the Microstructure and...

Working Pressure Effect on the Microstructure and Electric Resistivity of SiC Films Produced by MF Magnetron Sputtering

Abstract:

SiC films were prepared by mid-frequency (MF) magnetron sputtering with sintering SiC target on monocrystalline Si(100) substrate. SEM and XRD were used to investigate the surface morphology and microstructure of SiC films changing with working pressure. Results show that the resistivity value of 4H-SiC is larger than that of 3C-SiC and when working pressure is 0.3Pa, the film is mainly based on 3C-SiC, when pressure is 0.6Pa, the film is mainly based on 4H-SiC.

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Periodical:

Advanced Materials Research (Volumes 468-471)

Pages:

1181-1184

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.468-471.1181

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Online since:

February 2012

Authors:

Yang Yang Li, Jun Jie Hao, Rui Xin Wang, Fang Yang

Keywords:

Electric Resistivity, Mf Magnetron Sputtering, SiC Film

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References

[1] Matthias Kuenle, Stefan Janz, Oliver Eibl, Christoph Berthold, Volker Presser, Klaus-Georg Nickel: Materials Science and Engineering: B Vol. 159-160 (2009), pp.355-360

DOI: 10.1016/j.mseb.2008.10.056

Google Scholar

[2] H. ElGazzar, E. Abdel-Rahman, H.G. Salem, F. Nassar: Applied Surface Science Vol. 256 (2010), pp.2056-2060

DOI: 10.1016/j.apsusc.2009.09.047

Google Scholar

[3] S.M. Rajab, I.C. Oliveira, M. Massi, H.S. Maciel, S.G. dos Santos Filho, R.D. Mansano: Thin Solid Films Vol. 515 (2006), pp.170-175

DOI: 10.1016/j.tsf.2005.12.052

Google Scholar

[4] C. Lopes, N.M.G. Parreira, S. Carvalho, A. Cavaleiro, J. P. Rivière, E. Le Bourhis, F. Vaz : Surface & Coatings Technology Vol. 201 (2007), pp.7180-7186

DOI: 10.1016/j.surfcoat.2007.01.025

Google Scholar

[5] Yuankun Zhu, Jiaqi Zhu, Jiecai Han, Jun liang, Yuanchun Zhang: Chinese Journal of Materials Research Vol. 23 (2009), pp.410-414. In Chinese.

Google Scholar

[6] Jian Yi, Xiaodong He, Yue Sun, Li Yao: Appl. Surf. Sci. Forum Vol. 253 (2007), pp.4361-4366. In Chinese.

Google Scholar