Microcrystalline Silicon Thin Films and Triple-Junction Solar Cells

Hui Zhi Ren; Ying Zhao; Xiao Dan Zhang; Hong Ge; Zong Pan Wang

doi:10.4028/www.scientific.net/AMR.468-471.1912

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 468-471Microcrystalline Silicon Thin Films and...

Microcrystalline Silicon Thin Films and Triple-Junction Solar Cells

Abstract:

We report on microcrystalline silicon thin films and a-Si:H/a-SiGe:H/μc-Si:H triple-junction p-i-n solar cells deposited on large-area glass substrate. Microcrystalline silicon (μc-Si:H) bottom cells were deposited at a VHF-PECVD deposition system with 40.68MHz. It is necessary to develop the uniformity of μc-Si:H thin films for large-area deposition of high-quality triple-junction solar cells. By optimizing the deposition parameters, μc-Si:H thin films have been obtained with good thickness and very good crystalline volume fractions uniformity over the whole substrates area. The triple-junction module have been successful fabricated. The best module on 0.79 m2 size substrates has an initial total-area efficiency of 8.35%.

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Periodical:

Advanced Materials Research (Volumes 468-471)

Pages:

1912-1915

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.468-471.1912

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Online since:

February 2012

Authors:

Hui Zhi Ren, Ying Zhao, Xiao Dan Zhang, Hong Ge, Zong Pan Wang

Keywords:

Microcrystalline Silicon Thin Films, Triple-Junction Solar Cells, VHF-PECVD

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