Crystallinity and Characterization of Rf-Magetron Sputtered ZnO-Doped (Zr0.8Sn0.2)TiO4 Thin Films on ITO/Glass Substrate

Cheng Hsing Hsu; Pai Chuan Yang; Wen Shiush Chen; Jenn Sen  Lin

doi:10.4028/www.scientific.net/AMR.486.345

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Crystallinity and Characterization of Rf-Magetron Sputtered ZnO-Doped (Zr_0.8Sn_0.2)TiO₄ Thin Films on ITO/Glass Substrate

Abstract:

Microstructure, optical and electrical properties of ZnO-doped (Zr_0.8Sn_0.2)TiO₄ thin films prepared by rf magnetron sputtering on ITO/Glass substrates at different argon-oxygen (Ar/O₂) mixture have been investigated. The surface structural and morphological characteristics analyzed by X-ray diffraction (XRD) and atomic force microscope (AFM) were found to be sensitive to the Ar/O₂ ratio. Optical transmittance spectroscopy further revealed high transparency (over 70%) in the visible region of the spectrum. At an Ar/O₂ ratio of 100/0 and a substrate temperature of 400°C, the ZnO-doped (Zr_0.8Sn_0.2)TiO₂ films possess a dielectric constant of 44 at 10 MHz, a dissipation factor of 0.03 at 10 MHz, a leakage current density of 3.73×10^-9 A/cm².