Pulsed Laser Crystallization of Silicon Films Deposited by PECVD

Hua Zhang; Guo Ran Hua; Hong Cheng

doi:10.4028/www.scientific.net/AMR.486.432

Paper Titles

Synthesis of FePt Nanocubes Using Mo(Co)₆ as a Reducing Agent and their Magnetic Properties
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Preparation and Properties of Multiferroic La-Doped BiFeO₃ Thin Film
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Effect of Nano Biphasic Calcium Phosphate Bioceramics on Periodontal Regeneration in the Treatment of Alveolar Defects
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Sulfonation of Waste High Impact Polystyrene from Food Packaging as a Polymeric Flocculant
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Pulsed Laser Crystallization of Silicon Films Deposited by PECVD
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Spectrometric Radiation Measurements of Nanoporous Insulation Materials
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Preparation of Z-Pin from Different Resin and Evaluation of Interlaminar Reinforcement Effect by Pullout Test
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Development of Core-Crosslinked Micelles for Drug Delivery System
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A Computational Method for Modeling Interface Corner Crack under Steady-State Delamination
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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 486Pulsed Laser Crystallization of Silicon Films...

Pulsed Laser Crystallization of Silicon Films Deposited by PECVD

Abstract:

Pulsed laser was demonstrated to be effective for the crystallization of amorphous hydrogenated silicon (a-Si:H) films deposited on Si wafer. The amorphous films were deposited on (111) Si wafers by plasma enhanced chemical vapor deposition (PECVD). The crystallization treatment was carried out by a low frequency Nd:YAG laser. The crystallinity modifications induced by the laser treatment were evidenced by X-ray diffraction and atomic force microscope (AFM). The influence of laser frequency on the crystallization degree was analyzed in detail. The better crystallinity was obtained at the laser frequency of 10Hz.